參數(shù)資料
型號: MRF5S19060MBR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: PLASTIC, CASE 1484-04, 4 PIN
文件頁數(shù): 11/16頁
文件大?。?/td> 498K
代理商: MRF5S19060MBR1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
4
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic
Z8*
0.420″ x 0.083″ Microstrip
Z9*
0.975″ x 0.083″ Microstrip
Z10
0.250″ x 0.083″ Microstrip
Z11
0.700″ x 0.080″ Microstrip
Z12
0.700″ x 0.080″ Microstrip
PCB
Taconic TLX8-0300, 0.030″, εr = 2.55
* Variable for tuning
Z1
0.250″ x 0.083″ Microstrip
Z2*
0.500″ x 0.083″ Microstrip
Z3*
0.500″ x 0.083″ Microstrip
Z4*
0.515″ x 0.083″ Microstrip
Z5
0.480″ x 1.000″ Microstrip
Z6
1.140″ x 0.080″ Microstrip
Z7
0.600″ x 1.000″ Microstrip
RF
INPUT
DUT
C8
+
C1
C2
C9
R2
R1
Z6
R3
Z1
Z2
Z3
Z4
Z5
C7
C3
+
C4
+
C5
+
C6
Z11
RF
OUTPUT
Z7
Z8
Z9
Z10
C12
C10
C11
VSUPPLY
VBIAS
C13
C14
C15
++
Z12
Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1 μF, 35 V Tantalum Capacitor
TAJB105K35
AVX
C2
10 pF 100B Chip Capacitor
100B10R0CW
ATC
C3, C7, C12, C13
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C4, C5, C14, C15
10 μF, 35 V Tantalum Capacitors
TAJD106K035
AVX
C6
220 μF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
C8
0.8 pF 100B Chip Capacitor
100B0R8BW
ATC
C9
1.5 pF 100B Chip Capacitor
100B1R5BW
ATC
C10
1.0 pF 100B Chip Capacitor
100B1R0BW
ATC
C11
0.2 pF 100B Chip Capacitor
100B0R2BW
ATC
R1, R2
10 kW, 1/4 W Chip Resistors (1206)
R3
10 W, 1/4 W Chip Resistors (1206)
相關(guān)PDF資料
PDF描述
MRF5S19060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S19060NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S19060MR1 功能描述:MOSFET RF N-CH 28V 12W TO-270-4 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19060NBR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 60W 28V TO272WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S19060NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 60W 28V TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S19060NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19090HR3 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR