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參數(shù)資料
| 型號： | MRF5P21240HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 577K |
| 代理商： | MRF5P21240HR6 |
MRF5P21240HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2200
5
15
2080
50
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
@ Pout = 52 Watts Avg.
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, Pout = 52 W (Avg.), IDQ = 2200 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
30
5
10
15
20
INPUT
RETURN
LOSS
(dB)
IRL,
IM3
(dBc),
ACPR
(dBc)
25
2100
2120
2140
2160
2180
14
35
13
30
12
25
11
20
10
25
9
30
8
35
7
40
6
45
300
12
14
2
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
13.5
13
12.5
100
10
IDQ = 2640 mA
2420 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
2200 mA
1980 mA
1760 mA
300
55
25
2
IDQ = 2640 mA
2420 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,THIRD
ORDER
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
30
35
40
45
50
10
100
2200 mA
1980 mA
1760 mA
30
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
5th Order
3rd Order
30
35
40
45
50
110
46
50
60
36
Ideal
P3dB = 55.03 dBm (318.24 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 2200 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
59
58
57
56
55
54
53
52
51
37
38
39
40
41
42
43
44
45
P1dB = 54.36 dBm (272.9 W)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 2200 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5P21240R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5S18060N | 制造商:FREESCALE-SEMI 功能描述: |
| MRF5S18060NBR1 | 功能描述:射頻MOSFET電源晶體管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S18060NR1 | 功能描述:射頻MOSFET電源晶體管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S19060MBR1 | 功能描述:MOSFET RF N-CH 28V 12W TO-272-4 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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