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參數(shù)資料
| 型號(hào)： | MRF5P21045NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, 4 PIN |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 417K |
| 代理商： | MRF5P21045NR1 |
6
RF Device Data
Freescale Semiconductor
MRF5P21045NR1
TYPICAL CHARACTERISTICS
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
10
60
20
0.1
TWO TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA
Two Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 10. Pulsed CW Output Power versus
Input Power
40
54
P6dB = 47.74 dBm (74.82 W)
Pin, INPUT POWER (dBm)
52
46
42
30
34
32
36
Actual
Ideal
P1dB = 47.78 dBm (60.1 W)
50
44
48
38
28
P
out
,OUTPUT
POWER
(dBm)
IM3
(dBc),
ACPR
(dBc)
Figure 11. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS) CW
40
10
20
30
40
10
50
1
10
100
20
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 Carrier WCDMA, 10 MHz
Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
100
10
17
0.1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 500 mA
f = 2140 MHz
10
1
16
15
14
13
12
50
40
30
20
10
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
TC = 30_C
IM3
ηD
85
_C
ACPR
30
_C
25
_C
Gps
TC = 30_C
30
_C
25
_C
85
_C
25
_C
85
_C
IM3 L
IM3 U
IM5 L
IM5 U
IM7 U
IM7 L
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 2140 MHz
P3dB = 48.38 dBm (68.8 W)
50
15
25
35
45
15
25
35
45
55
25
_C
85
_C
30
_C
25
_C
25
_C
30
_C
11
60
29
31
33
35
37
39
43
45
47
49
51
53
55
ηD
Gps
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