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參數(shù)資料
| 型號(hào)： | MRF5P20180HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 397K |
| 代理商： | MRF5P20180HR6 |
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
2080
5
15
1840
45
40
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
@ Pout = 38 Watts Avg.
G
ps
,POWER
GAIN
(dB)
35
10
15
20
25
INPUT
RETURN
LOSS
(dB)
IRL,
IM3
(dBc),
ACPR
(dBc)
30
IM3
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14
35
13
30
12
25
11
20
10
20
9
25
8
30
7
35
6
40
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060
VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA
1000
11
16
1
IDQ = 2400 mA
800 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
10
100
15.5
15
14.5
14
13.5
13
12.5
12
11.5
2000 mA
1200 mA
1600 mA
1000
60
20
1
IDQ = 800 mA
2400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
VDD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1600 mA
1200 mA
2000 mA
10
100
25
30
35
40
45
50
55
100
60
20
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1600 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
25
30
35
40
45
50
55
110
46
44
58
30
P1dB = 53.5 dBm (224 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
44
42
40
38
36
34
32
57
56
55
54
53
52
51
50
49
48
47
46
45
P3dB = 54 dBm (251 W)
Actual
Ideal
η
D
,DRAIN
EFFICIENCY
(%)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5P20180HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5P20180R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P21045NR1 | 功能描述:射頻MOSFET電源晶體管 HV5 2170MHZ 10W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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