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參數(shù)資料
| 型號(hào)： | MRF464 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | MRF464 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. E
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 100 mA
65
V
BVCEO
IC = 100 mA
35
V
BVEBO
IE = 10 mA
2.5
V
ICES
VCE = 28 V
10
mA
hFE
VCE = 5.0 V
IC = 5.0 A
10
200
---
COB
VCB = 28 V
f = 1.0 MHz
200
pF
GPE
η
C
VCC = 28 V
f = 30.000 & 30.001 MHz
POUT = 80 W(PEP)
15
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF464
DESCRIPTION:
The
ASI MRF464 is Designed for 28
Volt Power Amplifier Applications up to
30 MHz.
FEATURES INCLUDE:
P
G = 15 dB Min. @ 30MHz & 80W
Common Emitter
MAXIMUM RATINGS
IC
10 A
VCB
65 V
VCE
35 V
VEB
2.5 V
PDISS
250 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
0.7 °C/W
PACKAGE STYLE .500" 4L FLANGE
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
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