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參數(shù)資料
| 型號： | MRF4427R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 86K |
| 代理商： | MRF4427R2 |
LIFETIME
BUY
LAST
ORDER
14/10/99
LAST
SHIP
14/04/00
1
MRF4427R2
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed for amplifier, frequency multiplier, or oscillator applications in
industrial equipment constructed with surface mount components. Suitable for
use as output driver or pre–driver stages in VHF and UHF equipment.
Low Cost SORF Plastic Surface Mount Package
Guaranteed RF Specification — |S21|2
S–Parameter Characterization
Low Voltage Version of MRF3866
Tape and Reel Packaging Available.
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
20
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
2.0
Vdc
Collector Current — Continuous
IC
400
mAdc
Total Device Dissipation @ TC = 75°C
Derate above 75
°C
PD
1.67
22.2
Watts
mW/
°C
Operating Junction and Storage Temperature Range
TJ, Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
45
°C/W
DEVICE MARKING
MRF4427 = 4427
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
20
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
V(BR)CER
40
—
Vdc
Emitter–Base Breakdown Voltage (IE = 100 Adc)
V(BR)EBO
2.0
—
Vdc
Collector Cutoff Current (VCE = 12 Vdc, IB = 0)
ICEO
—
20
Adc
NOTE:
(continued)
1.Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF4427/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF4427R2
1.0 W, 175 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 751–06, STYLE 1
SORF
(SO–8)
Motorola, Inc. 1998
REV 9
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