參數(shù)資料
型號(hào): MRF422
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER TRANSISTORS NPN SILICON
中文描述: 20 A, 40 V, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 132K
代理商: MRF422
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
h
FE
15
30
120
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
420
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 150 W (PEP), I
C(max)
= 6.7 Adc,
I
CQ
= 150 mAdc, f = 30, 30.001 MHz)
G
PE
10
13
dB
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 150 W (PEP), I
C(max)
= 6.7 Adc,
I
CQ
= 150 mAdc, f = 30, 30.001 MHz)
η
45
%
Intermodulation Distortion (1)
(V
CE
= 28 Vdc, P
out
= 150 W (PEP), I
C
= 6.7 Adc,
I
CQ
= 150 mAdc, f = 30, 30.001 MHz)
IMD
–33
–30
dB
Output Power
(V
CE
= 28 Vdc, f = 30 MHz)
P
out
150
Watts
(PEP)
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
Figure 1. 30 MHz Test Circuit Schematic
C1, C2, C3, C5 — 170
9
9
680 pF, ARCO 469
C4 — 80
9
9
480 pF, ARCO 466
C6, C8, C11 — ERIE 0.1
μ
F, 100 V
C7 — MALLORY 500
μ
F, 15 V Electrolytic
C9 — UNDERWOOD 1000 pF, 350 V
C10 — 10
μ
F, 50 V Electrolytic
R1 — 10
, 25 Watt Wire Wound
R2 — 10
, 1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16
I.D., 5/16
Long
L2 — 10
μ
H Molded Choke
L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4
Dia.
L4 — 5 Turns, 1/8
Copper Tubing
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
$
#
#
&%
#
',+
2
REV 6
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