參數(shù)資料
型號(hào): MRF421
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER TRANSISTORS NPN SILICON
中文描述: 20 A, 20 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 2/4頁
文件大?。?/td> 133K
代理商: MRF421
ELECTRICAL CHARACTERISTICS – continued
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
70
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 12.5 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
550
800
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(V
CC
= 12.5 Vdc, P
out
= 100 W, I
C(max)
= 10 Adc,
I
CQ
= 150 mAdc, f = 30, 30.001 MHz)
G
PE
10
12
dB
Collector Efficiency
(V
CC
= 12.5 Vdc, P
out
= 100 W, I
C(max)
= 10 Adc,
I
CQ
= 150 mA, f = 30, 30.001 MHz)
η
40
%
Intermodulation Distortion (1)
(V
CE
= 12.5 Vdc, P
out
= 100 W, I
C
= 10 Adc,
I
CQ
= 150 mA, f = 30, 30.001 MHz)
IMD
–33
–30
dB
NOTE:
1. To proposed EIA method of measurement. Reference peak envelope power.
Figure 1. 30 MHz Test Circuit Schematic
C1, C2, C4 — 170
9
9
780 pF, ARCO 469
C3 — 80
9
9
480 pF, ARCO 466
C5, C7, C10 — ERIE 0.1
μ
F, 100 V
C6 — MALLORY 500
μ
F @ 15 V Electrolytic
C9 — 100
μ
F, 15 V Electrolytic
C8 — 1000 pF, 350 V UNDERWOOD
R1 — 10
, 25 Watt Wirewound
R2 — 10
, 1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16
I.D., 5/16
Long
L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4
I.D.
L3 — 1–3/4 Turns, 1/8
Tubing, 3/8
I.D., 3/8
Long
L4 — 10
μ
H Molded Choke
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
$
#
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#
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#
#
#
&%
2
REV 1
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