- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98037 > MRF377R3 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF377R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 804K |
| 代理商： | MRF377R3 |
MRF377 MRF377R3 MRF377R5
5-73
Freescale Semiconductor
Wireless RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 A)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 A)
VGS(th)
—
2.8
—
Vdc
Gate Quiescent Voltage
(VDS = 32 Vdc, ID = 225 mA)
VGS(Q)
—
3.5
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
—
0.27
—
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.2
—
pF
Functional Characteristics (In DVBT OFDM Single-Channel, Narrowband Fixture, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
η
21
22.9
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
ACPR
—
-59.2
-57
dBc
Typical Characteristics (In DVBT OFDM Single-Channel, Broadband Fixture, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
—
17.6
17.4
16.8
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
—
23.5
25.8
23.0
22.7
21.3
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
—
-59.3
-58.7
-58.1
—
dBc
1. Each side of device measured separately.
2. Measured in push-pull configuration.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF377R5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MPS571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AA |
| MRF5P20180HR6 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5P21045NR1 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
發(fā)布緊急采購，3分鐘左右您將得到回復。