參數(shù)資料
型號(hào): MRF377HR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁(yè)數(shù): 9/16頁(yè)
文件大?。?/td> 812K
代理商: MRF377HR5
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage (4)
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
2.8
Vdc
On Characteristics
Gate Quiescent Voltage (3)
(VDS = 32 Vdc, ID = 2000 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
0.27
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
3.2
pF
Functional Tests (3) (In DVBT OFDM Single-Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
Gps
16.5
18.2
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ηD
21
22.9
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ACPR
-59.2
-57
dBc
Typical Performances (3) (In DVBT OFDM Single-Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
17.6
17.4
16.8
dB
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
(continued)
相關(guān)PDF資料
PDF描述
MRF377 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377R3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377R5 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF571T1 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MPS571T1 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF377R3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF377R5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF3866 功能描述:射頻雙極小信號(hào)晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MRF3866G 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R1 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT