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參數(shù)資料
| 型號(hào)： | MRF377 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 804K |
| 代理商： | MRF377 |
5-76
Freescale Semiconductor
Wireless RF Product Device Data
MRF377 MRF377R3 MRF377R5
TYPICAL NARROWBAND CHARACTERISTICS
2200 mA
100
16
19
10
Gps
Pout, OUTPUT POWER (WATTS) PEP
Figure 2. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18.5
18
17.5
17
16.5
100
70
20
10
IDQ = 1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
1600 mA
1800 mA
2000 mA
100
80
20
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
70
5th Order
3rd Order
η
100
5
45
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Drain Efficiency versus
Output Power
,DRAIN
EFFICIENCY
(%)
η
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
40
35
30
25
20
15
10
η
100
12
19
10
80
60
Gps
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18
40
17
20
16
0
15
20
14
40
13
60
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| MRF377R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MPS571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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