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參數(shù)資料
| 型號(hào)： | MRF374 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-650, CASE 375F-03, 5 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 1140K |
| 代理商： | MRF374 |
1
MRF374
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 28
volt transmitter equipment.
Typical Two–Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 100 Watts PEP
Power Gain – 13.5 dB
Efficiency – 36%
IMD – –31 dBc
Typical Performance at 860 MHz, 28 Volts, Broadband Fixture
Output Power – 100 Watts PEP
Power Gain – 12 dB
Efficiency – 36%
IMD – –34 dBc
100% Tested for Load Mismatch Stress at All Phase Angles
with 5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW
Excellent Thermal Stability
Characterized with Differential Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current – Continuous (per Side)
ID
7
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
270
1.25
W
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF374/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 100 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F–04, STYLE 1
NI–650
MRF374
Motorola, Inc. 2002
REV 5
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
A
R
C
H
IV
E
D
2
0
5
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| MRF377HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF377R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF374A | 功能描述:射頻MOSFET電源晶體管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF374A_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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