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參數(shù)資料
| 型號(hào)： | MRF373AS |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-05, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 139K |
| 代理商： | MRF373AS |
MRF373A MRF373AS
5.2–36
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts (CW)
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
70
Vdc
Gate–Source Voltage
VGS
+15, – 0.5
Vdc
Total Device Dissipation @ TC = 25°C
MRF373A
Derate above 25
°C
MRF373AS
PD
197
1.12
278
1.59
Watts
W/
°C
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373A
MRF373AS
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373A
MRF373AS
RθJC
0.89
0.63
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
(NI–360)
(MRF373A)
CASE 360C–05, STYLE 1
(NI–360S)
(MRF373AS)
MRF373A
MRF373AS
G
D
S
REV 1
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