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參數(shù)資料
| 型號： | MRF321 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MRF321 |
1
MRF321
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability
Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
33
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
Collector Current
— Peak
1.1
1.5
Adc
Total Device Dissipation @ TA = 25
°
C (1)
Derate above 25
°
C
PD
27
160
Watts
mW/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
6.4
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 5.0 Vdc)
hFE
20
—
80
—
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Order this document
by MRF321/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
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|---|---|
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