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參數(shù)資料
| 型號： | MRF316 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-6 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | MRF316 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
65
V
BVCES
IC = 100 mA
65
V
BVCEO
IC = 100 mA
35
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 30 V
15
mA
hFE
VCE = 5.0 V
IC = 5.0 A
20
200
---
COB
VCB = 28 V
f = 1.0 MHz
250
pF
10.0
55
13.0
60
dB
%
PG
ηηηη
C
Ψ
VCE = 28 V
POUT = 80 W
f = 175 MHz
30:1 minimum without degation in output power
NPN SILICON RF POWER TRANSISTOR
MRF316
DESCRIPTION:
The
MRF316 is Designed for Class C
Power Amplifier Applications up to 200
MHz.
FEATURES:
P
G = 10 dB min. at 80 W/ 150 MHz
Withstands 30:1 Load VSWR
Omnigold Metalization System
MAXIMUM RATINGS
IC
20 A
VCBO
65 V
VCEO
36 V
VEBO
4.0 V
PDISS
270 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +150 OC
θθθθ
JC
0.65
OC/W
PACKAGE STYLE .500 6L FLG
ORDER CODE: ASI10771
MIN IMU M
inche s / m m
.490 / 12.45
.210 / 5.3 3
.003 / 0.0 8
B
C
D
E
F
G
A
MAX IMU M
.220 / 5.5 9
.007 / 0.1 8
.510 / 12.95
inche s / m m
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.3 2
N
M
.120 / 3.0 5
.135 / 3.4 3
.150 / 3.4 3
.160 / 4.0 6
.125 / 3.1 8
.090 / 2.2 9
.105 / 2.6 7
.285 / 7.2 4
.150 / 3.8 1
.045 / 1.1 4
E
F
.7 25/18 ,4 2
I
G
J
K
L
M
A
D
C
B
2x N
FU LL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.3 3
.200 / 5.0 8
E
B
C
E
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