參數(shù)資料
型號: MRF314
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.380 INCH, FM-4
文件頁數(shù): 1/1頁
文件大小: 17K
代理商: MRF314
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 30 mA
35
V
BVCES
IC = 30 mA
65
V
BVEBO
IE = 3.0 mA
4.0
V
ICBO
VE = 30 V
3.0
mA
hFE
VCE = 5.0 V
IC = 1.5 A
20
80
---
COB
VCB = 30 V
f = 1.0 MHz
30
40
pF
10
50
13.5
dB
%
PG
ηηηη
C
ψ
VCC = 28 V
POUT = 30 W
f = 150 MHz
30:1 all phase angles, no degadation in output.
NPN SILICON RF POWER TRANSISTOR
MRF314
DESCRIPTION:
The
MRF314 is Designed for Class C
Power Amplifier Applications up to 200
MHz.
FEATURES:
P
G = 10 dB min. at 30 W/ 150 MHz
Withstands 30:1 Load VSWR
Omnigold Metalization System
MAXIMUM RATINGS
IC
3.4 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
82 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
2.13 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10872
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