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參數(shù)資料
| 型號(hào)： | MRF284LSR1 |
| 廠(chǎng)商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大?。?/td> | 744K |
| 代理商： | MRF284LSR1 |
A
R
C
H
IV
E
IN
F
O
R
M
A
T
IO
N
A
R
C
H
IV
E
IN
F
O
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M
A
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IO
N
MRF284LSR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,P
O
W
E
R
G
A
IN
(d
B
)
G
ps
,G
A
IN
(d
B
)
Figure 4. Output Power & Power Gain
versus Input Power
35
Pin, INPUT POWER (WATTS)
5
0
2.0
15
25
Figure 5. Output Power versus Frequency
10
1840
f, FREQUENCY (MHz)
45
25
15
1.0
3.0
3.5
35
P o
ut
,O
U
T
P
U
T
P
O
W
E
R
(W
A
T
S
)
1800
2000
0
P o
ut
,O
U
T
P
U
T
P
O
W
E
R
(W
A
T
S
)
30
13
9
6
G
ps
,G
A
IN
(d
B
)
1880
1920
Figure 6. Intermodulation Distortion Products
versus Output Power
-- 20
Pout, OUTPUT POWER (WATTS) PEP
-- 80
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
11
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
8
10
IM
D
,I
N
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
Figure 8. Intermodulation Distortion
versus Output Power
0.1
Pout, OUTPUT POWER (WATTS) PEP
-- 60
10
-- 30
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
8
1.0
12
10
1.0
0.1
9
10
11
10
6
20
22
16
-- 40
-- 20
IM
D
,I
N
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
--40
--35
IM
D
,I
N
T
E
R
M
O
D
U
LA
T
IO
N
D
IS
T
O
R
T
IO
N
(d
B
c)
VDD = 26 Vdc
IDQ = 200 mA
f = 2000 MHz Single Tone
40
24
26
28
13
12
--30
--25
--20
--15
--10
-- 70
-- 60
-- 50
-- 40
20
30
Pout = 30 W (PEP)
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
Gps
3rd Order
7th Order
5th Order
Pin = 1 W
4 W
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
100 mA
IDQ = 400 mA
300 mA
200 mA
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
14
11
10
20
-- 30
18
VDD = 26 Vdc
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
-- 50
Pout
1.5
0.5
2.5
VDD = 26 Vdc
IDQ = 200 mA
Single Tone
IMD
9
7
100 mA
IDQ = 400 mA
300 mA
200 mA
4.0
7
8
10
12
40
1860
1820
1900
1940 1960 1980
2 W
3 W
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