- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378675 > MRF247 (MOTOROLA INC) RF POWER TRANSISTOR NPN SILICON PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF247 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 316-01, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 151K |
| 代理商： | MRF247 |
1
MRF247
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 175 MHz.
Specified 12.5 Volt, 175 MHz Characteristics —
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
Characterized With Series Equivalent Large–Signal Impedance Parameters
Internal Matching Network Optimized for Minimum Gain Frequency Slope
Response Over the Range 136 to 175 MHz
Load Mismatch Capability at Rated Pout and Supply Voltage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
18
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Peak
20
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
V(BR)CEO
18
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
V(BR)EBO
4.0
—
—
Vdc
Order this document
by MRF247/D
SEMICONDUCTOR TECHNICAL DATA
75 W, 175 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF2628 | RF POWER TRANSISTOR NPN SILICON |
| MRF275G | 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
| MRF275 | 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
| MRF282 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF248 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF24J40 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:IEEE 802.15.4? 2.4 GHz RF Transceiver |
| MRF24J40_08 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:IEEE 802.15.4? 2.4 GHz RF Transceiver |
| MRF24J40_10 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:IEEE 802.15.4a?￠ 2.4 GHz RF Transceiver |
| MRF24J40-I | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:IEEE 802.15.4⑩ 2.4 GHz RF Transceiver |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。