參數(shù)資料
型號: MRF21180S
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-1230S, CASE 375E-03, 5 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 356K
代理商: MRF21180S
3
MRF21180 MRF21180S
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
12
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
33
%
Two–Tone Intermodulation Distortion
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
–30
dBc
Two–Tone Input Return Loss
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
–12
dB
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz)
P1dB
180
W
(2) Measurements made with device in push–pull configuration.
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