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參數(shù)資料
| 型號(hào)： | MRF21120R6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 371K |
| 代理商： | MRF21120R6 |
RF Device Data
Freescale Semiconductor
MRF21120R6
TYPICAL CHARACTERISTICS
Figure 3. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
9
10
Figure 4. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
1.0
0.10
13
Figure 5. Class AB Broadband
Circuit Performance
13
f, FREQUENCY (MHz)
5
Figure 6. 2.17 GHz W-CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
Center 2.17 GHz
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W-CDMA)
Pout, OUTPUT POWER (WATTS) AVG.
10
2100
12
14
7
11
2140
11
2200
1.0
8
10
2
100
12
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
60
20
50
30
40
32
40
26
30
50
45
35
12
9
2180
2120
2160
Gps
η
100
60
30
80
40
20
10
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
12
13
7
100
1.0
9
11
5
,POWER
GAIN
(dB)
G
ps
1800 mA
1500 mA
1300 mA
1100 mA
1000 mA
850 mA
600 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
1.0
10
100
1800 mA
600 mA
850 mA
1100 mA
1000 mA
1300 mA
1500 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
28
24
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
η
,EFFICIENCY
(%)
10
6
8
VSWR
IMD
VDD = 28 Vdc, IDQ = 1000 mA
TwoTone, 100 kHz Tone Spacing
VSWR
2.0
1.0
1.5
1.5 MHz
Span 15 MHz
70
90
50
c11
c0
cu1
1RM
Ref Lv1
5 dBm
MARKER 1 [T1]
22.77 dBm
2.17000000 GHz
RBW
VBW
SWT
30 kHZ
1 MHz
2 s
RF Att
Unit
10 dB
dBm
4
6
η
,EFFICIENCY
(%)
ACPR
(dB)
20
40
60
40
0
60
20
Gps
η
ACPR UP
ACPR DOWN
VDD = 28 Vdc
IDQ = 1000 mA
f = 2170 MHz
η
,EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
6
8
10
20
60
80
40
0
80
40
20
60
Gps
η
IMD
VDD = 28 Vdc, IDQ = 1000 mA
f = 2170.0 MHz, f2 = 2170.1 MHz
0.10
1
CH PWR
ACR UP
ACR LOW
1 [T1]
A
22.77 dBm
2.17000000 GHz
2.95 dBm
45.14 dB
45.45 dB
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
G
ps
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21125 | 制造商:Motorola Inc 功能描述: |
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| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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| MRF21180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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