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參數(shù)資料
| 型號(hào)： | MRF21120R6 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-1230, CASE 375D-04, 4 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 348K |
| 代理商： | MRF21120R6 |
MRF21120R6
MOTOROLA RF DEVICE DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
W-CDMA Performance @ -45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
389
2.22
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.45
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21120/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21120R6
2170 MHz, 120 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-04, STYLE 1
NI-1230
Motorola, Inc. 2004
REV 9
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