參數(shù)資料
型號(hào): MRF21090S
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-880S, CASE 465C-02, 2 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 146K
代理商: MRF21090S
MRF21090 MRF21090S
4
MOTOROLA RF DEVICE DATA
TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE)
η
P
out
, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
60
0
Figure 3. Class AB Broadband Circuit
Performance
2080
10
5
Figure 4. CDMA ACPR, Power Gain and Drain
Efficiency versus Output Power
20
0
30
20
15
20
30
40
V
DD
= 28 Vdc
I
DQ
= 750 mA
P
out
= 90 Watts (PEP)
Two–Tone Measurement
100 kHz Tone Spacing
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
10
25
P
out
, OUTPUT POWER (WATTS) PEP
–25
–551
–45
–40
–30
100
I
–50
–35
10
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
P
out
, OUTPUT POWER (WATTS) PEP
15
101
12
14
100
G
11
13
V
DS
, DRAIN VOLTAGE (VOLTS)
11.8
11.0
11.4
11.6
34
20
22
28
10.8
11.2
10.6
10
32
24
26
30
2100
2120
2140
2160
2180
2200
50
–35
–30
–25
–20
–15
–10
–5
5.0
10
15
–70
–60
–50
–40
–30
–20
A
V
DD
= 28 Vdc
f = 2140 MHz
Two–Tone Measurement
100 kHz Tone Spacing
P
out
, OUTPUT POWER (WATTS) PEP
–20
–801
–60
–50
–30
100
I
–70
–40
10
V
DD
= 28 Vdc
I
DQ
= 750 mA
f = 2140 MHz
Two–Tone Measurement
100 kHz Tone Spacing
G
I
–34
–32
–30
–28
–26
–24
–22
V
DD
= 28 Vdc
f = 2140 MHz
Two–Tone Measurement
100 kHz Tone Spacing
f = 2140 MHz
I
DQ
= 750 mA
P
out
= 90 Watts (PEP)
Two–Tone Measurement
100 kHz TS
Fixture Tuned for 28 Volts
IRL
η
G
ps
IMD
ACPR
1000 mA
800 mA
1500 mA
500 mA
2000 mA
5th Order
7th Order
3rd Order
2000 mA
1500 mA
1000 mA
800 mA
500 mA
IMD
,
η
Gp
,
η
Gp
I
I
G
ps
G
ps
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
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