參數(shù)資料
型號(hào)： MRF21060S
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： RF MOSFET(射頻MOS場(chǎng)效應(yīng)管)
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 465A-06, 3 PIN
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 126K
代理商： MRF21060S
5
MRF21060 MRF21060R3 MRF21060S MRF21060SR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
,
η
Gp
A
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
5
0
2080
2120
15
Figure 4. W–CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
10
Pout, OUTPUT POWER (WATTS (Avg. W–CDMA))
45
20
2100
2180
35
2
–40
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
–65
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
0.1
0.1
12
14
VDD = 28 V
IDQ = 500 mA, Pout = 60 Watts (PEP)
Two–Tone Measurement, 100 kHz Tone Spacing
40
–55
–45
–35
1.0
–5
–15
–30
10
25
20
10
11
2140
2160
6
14
100
10
0.1
10
2200
1.0
100
30
35
–35
0
–10
–25
–20
η
IRL
IMD
10
30
40
3rd Order
5th Order
7th Order
–25
–60
–50
–40
–30
–80
–20
–50
–70
–60
–40
–30
13
I
I
,
η
Gp
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
32
24
13
14
I
28
22
12.5
12
13.5
15
25
–60
–25
–35
–50
–55
–20
–30
–45
–40
16
ACPR
VDD = 28 V
IDQ = 700 mA, f = 2140 MHz, Channel Spacing
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
15 DTCH
I
10
900 mA
700 mA
500 mA
VDD = 28 V
f = 2140 MHz
Two–Tone Measurement, 100 kHz Tone Spacing
I
VDD = 28 V
IDQ = 700 mA, f = 2140 MHz
Two–Tone Measurement, 100 kHz Tone Spacing
Gp
900 mA
700 mA
500 mA
VDD = 28 V
f = 2140 MHz
Two–Tone Measurement, 100 kHz Tone Spacing
Gp
–38
–24
–28
–34
–36
–22
–26
–32
–30
26
30
Gps
η
Gps
Gps
IMD
12
4
8
f = 2140 MHz
IDQ = 500 mA, Pout = 60 Watts (PEP)
Two–Tone Measurement,
100 kHz Tone Spacing
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF21060SR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF21085 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF21085LR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF21085LS 制造商:Motorola Inc 功能描述:
MRF21085LSR3 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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