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參數(shù)資料
| 型號(hào)： | MRF21045R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 406K |
| 代理商： | MRF21045R3 |
3
MRF21045R3 MRF21045LR3 MRF21045SR3 MRF21045LSR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) — continued
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
14.9
—
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
36
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
-30
—
dBc
Two-Tone Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
-12
—
dB
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)
P1dB
—
50
—
W
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| MRF21120R6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21045S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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