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參數(shù)資料
| 型號： | MRF21030S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 465F-03, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MRF21030S |
MRF21030 MRF21030S
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
VDD = 28 V, IDQ = 250 mA, Pout = 30 Watts (PEP)
Two–Tone Measurement, 100 kHz Tone Spacing
η
IRL
IMD
Gps
,
η
Gp
A
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
0
2080
2120
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
30
20
2100
2180
2
–35
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
–55
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
1.0
15
16
60
–45
–35
–15
–30
10
20
10
14
2140
2160
4
5
100
10
1.0
13
2200
100
30
40
–5
–25
–20
10
3rd Order
5th Order
–25
–50
–40
–30
–20
–50
–70
–60
–40
–30
I
I
,
η
Gp
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
34
24
–30
–22
I
28
20
–34
–38
–26
15
25
–70
–30
–50
–20
–40
–60
6
VDD = 28 V, IDQ = 250 mA, f = 2140 MHz,
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
I
10
200 mA
250 mA
400 mA
VDD = 28 V, f = 2140 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
I
VDD = 28 V, IDQ = 250 mA, f = 2140 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
Gp
VDD = 28 V, f = 2140 MHz
Two–Tone Measurement, 100 kHz Tone Spacing
Gp
13
13.5
15
14.5
14
26
30
f = 2140 MHz
IDQ = 250 mA, Pout = 30 Watts (PEP)
Two–Tone Measurement, 100 kHz Tone Spacing
η
Gps
Gps
IMD
0
1
3
350 mA
300 mA
200 mA
250 mA
400 mA
350 mA
300 mA
22
32
7th Order
50
–10
ACPR
–32
–24
–36
–28
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21030SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21045 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21045LR3 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21045LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF21045LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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