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參數(shù)資料
| 型號(hào)： | MRF19060 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 200K |
| 代理商： | MRF19060 |
1
MRF19060 MRF19060S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
Typical CDMA Performance: 1960 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC
≥
= 25
°
C
Derate above 25
°
C
180
1.03
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.97
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19060/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 1990 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF19060)
CASE 465A–04, STYLE 1
(MRF19060S)
REV 1
相關(guān)PDF資料 |
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| MRF19060S | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| MRF19085LSR3 | RF Power Field Effect Transistors |
| MRF19085 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085LR3 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085R3 | RF Power Field Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19060LR3 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060LSR3 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060R3 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF19060SR3 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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