參數(shù)資料
型號： MRF19030S
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power MOSFETs(RF功率MOS場效應管)
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 465F-03, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 150K
代理商： MRF19030S
MRF19030 MRF19030S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20
μ
A)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100
μ
Adc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 300 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Gps
—
13
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η
—
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD
—
–31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL
—
–13
—
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps
12
13
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η
33
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL
—
–13
–9
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關代理商/技術參數(shù)
參數(shù)描述
MRF19030SR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF19045LR3 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF19045LR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LR5 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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