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參數(shù)資料
| 型號： | MRF186 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場效應(yīng)管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-860, CASE 375B-04, 5 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 168K |
| 代理商： | MRF186 |
MRF186
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50
μ
Adc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
(1)
V(BR)DSS
65
—
—
Vdc
IDSS
—
—
1
μ
Adc
IGSS
—
—
1
μ
Adc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300
μ
Adc Per Side)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 mAdc Per Side)
Delta Gate Threshold Voltage (Side to Side)
(VDS = 28 V, ID = 300 mA Per Side)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc Per Side)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc Per Side)
DYNAMIC CHARACTERISTICS
(1)
VGS(th)
2.5
3
4
Vdc
VGS(Q)
3.3
4.2
5
Vdc
VGS(Q)
—
—
0.3
Vdc
VDS(on)
—
0.58
0.7
Vdc
gfs
2.4
2.8
—
S
Input Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
(In Motorola Test Fixture)
(2)
Ciss
—
177
—
pF
Coss
—
45
—
pF
Crss
—
3.4
—
pF
Two–Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
11
12.2
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
30
35
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
–32
–28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
9
16
—
dB
Two–Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Gps
—
12
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
IMD
—
–32
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
IRL
—
16
—
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA,
f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF187S | RF MOSFET(射頻MOS場效應(yīng)管) |
| MRF187 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | ER 16 16S D/C PLAS |
| MRF187SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF19030 | RF POWER FIELD EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF187 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF187SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19030 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391VAR |
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