- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371143 > MRF184S (MOTOROLA INC) LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF184S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-03, 2 PIN |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | MRF184S |
MRF184 MRF184S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200
μ
A)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.65
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.6
–
s
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
–
83
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
44
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.3
–
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Gps
11.5
15
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
η
53
60
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
ψ
No Degradation in Output Power
Figure 1. MRF184 Test Circuit Schematic
B1
C1
C2, C3, C6, C9
C4
C5, C12
C7, C10
C8, C11
C13
Short RF Bead Fair Rite–2743019447
18 pF Chip Capacitor
43 pF Chip Capacitor
100 pF Chip Capacitor
10
μ
F, 50 Vdc Electrolytic Capacitor
1000 pF Chip Capacitor
0.1
μ
F, 50 Vdc Chip Capacitor
250
μ
F, 50 Vdc Electrolytic Capacitor
R1
R2
R3
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
L1
B1
R4
DUT
C13
C12
TL1
TL2
TL3
TL4
RF
INPUT
RF
OUTPUT
VGG
VDD
L1
R1
R2
R3
R4
TL1–TL4
Ckt Board
5 Turns, 20 AWG, IDIA 0.126
″
10 k
, 1/4 W Resistor
13 k
, 1/4 W Resistor
1.0 k
, 1/4 W Chip Resistor
4 x 39
, 1/8 W Chip Resistor
Microstrip Line See Photomaster
1/32
″
Glass Teflon,
ε
r = 2.55
ARLON–GX–0300–55–22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF185 | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| MRF186 | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| MRF187S | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
| MRF187 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | ER 16 16S D/C PLAS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF184SR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF185 | 制造商:ASI 制造商全稱:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。