參數(shù)資料
型號: MRF184
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 360B-04, 3 PIN
文件頁數(shù): 4/9頁
文件大?。?/td> 194K
代理商: MRF184
MRF184 MRF184S
4
MOTOROLA RF DEVICE DATA
G
16
880
900
920
980
f, FREQUENCY (MHz)
15
14
13
940
960
VDD = 28 Vdc
IDQ = 400 mA
Pout = 60 W (CW)
VSWR
Gpe
I
15.5
14.5
13.5
65
55
45
η
40
η
,
1
1
2
2
I
4
3
2
0
0
1
3
5
6
VGS, GATE VOLTAGE (VOLTS)
90
800
880
900
1000
f, FREQUENCY (MHz)
P
TYPICAL CHARACTERISTICS
Figure 8. Output Power versus Frequency
Figure 9. Drain Current versus Gate Voltage
80
40
10
0
VDS = 28 Vdc
140
100
60
0
0
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
20
30
50
C
Figure 10. Capacitance versus Voltage
VGS = 0 Vdc
f = 1.0 MHz
6
3
1
0
0
10
20
30
35
VDS, DRAIN VOLTAGE (Vdc)
,
I
Figure 11. DC Safe Operating Area
TJ = 150
°
C
TF = 70
°
C
7
0
10
20
35
VDS, DRAIN VOLTAGE (Vdc)
Figure 12. DC Safe Operating Area
4.5
3
0
Figure 13. Performance in Broadband Circuit
TYPICAL DEVICE SHOWN
1.0 W
Pin = 2.5 W
VDD = 28 Vdc
IDQ = 400 mA
SINGLE TONE
840
980
940
960
60
20
2
4
3.5
2.5
1
20
5
15
25
40
45
35
Ciss
Coss
Crss
5
15
25
5
2.5
0.5
4
2
3.5
1.5
TJ = 175
°
C
TF = 70
°
C
5
15
25
30
5
3.5
1.5
6
4
2.5
0.5
,
I
0.5 W
0.5
1.5
80
40
2
1
860
820
920
70
30
50
120
5.5
4.5
6.5
5.5
60
50
35
相關(guān)PDF資料
PDF描述
MRF184S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF185 RF MOSFET(射頻MOS場效應(yīng)管)
MRF186 RF MOSFET(射頻MOS場效應(yīng)管)
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