- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379326 > MRF182S (MOTOROLA INC) LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs PDF資料下載
參數(shù)資料
| 型號： | MRF182S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-03, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 133K |
| 代理商： | MRF182S |
1
MRF182
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral
MOSFETs
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Total Device Dissipation @ TC = 70
°
C
Derate above 70
°
C
74
0.57
W
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1.0 Adc)
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
–
–
1
μ
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
–
–
1
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF182/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF182)
CASE 360C–03, STYLE 1
(MRF182S)
G
D
S
REV 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF183 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF19090SR3 | 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor |
| MRF19090 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21045LR3 | RF Power Field Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF183 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183LSR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183R1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。