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參數(shù)資料
| 型號(hào)： | MRF182 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 266K |
| 代理商： | MRF182 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVDSS
ID = 1.0 A
65
V
IDSS
VDS = 28 V
VGS = 0 V
1.0
A
IGSS
VDS = 0 V
VGS = 20 V
1.0
A
VGS(th)
VDS = 10 V
ID = 100 A
2.0
3.0
4.0
V
VGS(Q)
VDS = 28 V
ID = 50 mA
3.0
4.0
5.0
V
VDS(on)
VGS = 10 V
ID = 3.0 A
0.9
1.2
V
gfs
VDS = 10 V
ID = 3.0 A
1.6
1.8
S
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
56
28
2.5
pF
GPS
η
VDD = 28 V
POUT = 30 W
f = 945 MHz
IDQ = 50 mA
11
50
14
58
dB
%
RF POWER FET TRANSISTOR
MRF182
PACKAGE STYLE .350 2L FLG
DESCRIPTION:
The ASI MRF182 is an RF power field
effect transistor, N-Channel
Enhancement-Mode lateral MOSFET.
FEATURES INCLUDE:
Bradband performance from HF to 1
GHz
Omnigold Metalization System
High Gain, Rugged device.
MAXIMUM RATINGS
VDSS
65 V
VGS
±20 V
PD
74 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
1.75 °C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF182S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B 制造商:Njs 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF183 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183LSR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183R1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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