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參數(shù)資料
| 型號(hào)： | MRF181SR1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 458B-02, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | MRF181SR1 |
LIFETIME
BUY
LAST
ORDER
31JUN04
LAST
SHIP
31JAN05
MRF181SR1 MRF181ZR1
4
MOTOROLA RF DEVICE DATA
P
out
,OUTPUT
POWER
(W
A
TTS)
Pout, OUTPUT POWER (WATTS)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Pout, OUTPUT POWER (WATTS) PEP
–15
–30
–45
–55
0.1
1
10
100
–20
02
3
4
6
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion Products
versus Output Power
Figure 3. Intermodulation Distortion versus
Output Power
–30
–40
–50
–60
–80
5th
7th
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 75 mA
22
18
14
12
0.1
1
10
100
G
ps
,POWER
GAIN
(dB)
Figure 4. Power Gain versus Output Power
16
10
4
0
0.2
0.4
0.6
Pin, INPUT POWER (WATTS)
P
out
,OUTPUT
POWER
(W
A
TTS)
Figure 5. Output Power versus Input Power
VDS = 28 Vdc
IDQ = 75 mA
f = 945 MHz
12
16
20
32
VDD, SUPPLY VOLTAGE (VOLTS)
P
out
,OUTPUT
POWER
(W
A
TTS)
Figure 6. Output Power versus Supply Voltage
8
4
0
6
0
0.5
1
5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate Voltage
4
2
0
1
2
3.5
Gps
Pout
TYPICAL DEVICE SHOWN
3rd Order
–70
15
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
–20
–40
–35
–25
–50
150 mA
75 mA
VDD = 28 Vdc
f = 945 MHz
25 mA
20
16
G
ps
,POWER
GAIN
(dB)
14
8
2
6
12
0.1
0.3
0.5
18
15
17
14
16
IDQ = 75 mA
f = 945 MHz
50 mW
100 mW
Pin = 200 mW
VDS = 28 Vdc
Pin = 75 mW
f = 945 MHz
14
18
28
24
30
22
26
10
6
2
5
3
2.5
3
4
4.5
1.5
IDQ = 250 mA
IDQ = 25 mA
150 mA
75 mA
250 mA
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| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF183R1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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