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參數(shù)資料
| 型號： | MRF18090BS |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | MRF18090BS |
MRF18090B MRF18090BS
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100
μ
Adc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
—
10
μ
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
VGS(Q)
2.5
3.7
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.1
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.2
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
4.2
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
Gps
12
13.5
—
dB
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
η
40
45
—
%
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 – 1990 MHz)
IRL
10
—
—
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
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