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參數(shù)資料
| 型號： | MRF18085BLSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 450K |
| 代理商： | MRF18085BLSR3 |
6
RF Device Data
Freescale Semiconductor
MRF18085BLR3 MRF18085BLSR3
TYPICAL CHARACTERISTICS
(Performed on a GSM EDGE Optimized Demo Board)
Figure 5. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
10
Figure 6. Error Vector Magnitude versus
Frequency
0
f, FREQUENCY (GHz)
5
1.5
G
ps
,POWER
GAIN
(dB)
1.91
EVM,
ERROR
VECT
OR
MAGNITUDE
(%)
Figure 7. Power Gain versus Output Power
14
Pout, OUTPUT POWER (WATTS)
9
Figure 8. EVM and Gain versus Output Power
Pout, OUTPUT POWER (dBm) AVG.
1
034
36
6
10
0.5
100
2.5
1.98
1.95
11
η
,DRAIN
EFFICIENCY
(%)
0
20
Figure 9. Power Gain and IRL
versus Frequency
14
f, FREQUENCY (GHz)
11
1.85
13.5
2.05
1.95
1.90
2.00
10
13
14
1.97
40
38
50
14
13
11
9
8
11
12
1.94
1.96
3.5
60
80
12
13
3
2
4
5
10
G
ps
,POWER
GAIN
(dB)
30
15
25
20
5
10
12
11.5
1
1.93
1.99
1.92
4.5
100
2
1
3
4
2.0
Figure 10. Power Gain and Efficiency
versus Output Power
16
Pout, OUTPUT POWER (WATTS)
10
14
10
1
100
G
ps
,POWER
GAIN
(dB)
60
30
10
0
20
50
40
12
EVM,
ERROR
VECT
OR
MAGNITUDE
(%)
G
ps
,POWER
GAIN
(dB)
42
44
46
48
15
13
11
12.5
13
VDD = 26 Vdc
f = 1960 MHz
600 mA
400 mA
800 mA
IDQ = 1000 mA
Pout = 38 W Avg.
28 W Avg.
19 W Avg.
VDD = 26 Vdc
IDQ = 800 mA
24 V
VDD = 20 V
32 V
28 V
Gps
EVM
VDD = 26 Vdc
IDQ = 800 mA
30 W
80 W
h
Gps
9.5
10.5
11.5
12.5
13.5
G
ps
,POWER
GAIN
(dB)
40
12
35
VDD = 26 Vdc
IDQ = 800 mA
f = 1960 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18085BR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18090A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
| MRF18090AR3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18090AS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
| MRF18090B | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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