參數(shù)資料
型號： MRF18060BR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： SEE A3282LUA-T
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780, CASE 465-06, 2 PIN
文件頁數(shù)： 2/8頁
文件大小： 490K
代理商： MRF18060BR3
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
6
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
V
GS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.27
—
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
4.7
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
—
160
—
pF
Output Capacitance (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
740
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.7
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1930 - 1990 MHz)
G
ps
11.5
13
—
dB
Drain Efficiency @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1930 - 1990 MHz)
η
40
45
—
%
Input Return Loss (2)
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1930 - 1990 MHz)
IRL
—
—
-10
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch
consistency.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF18060BSR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF18060BST 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR
MRF18085A 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF18085ALR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF18085ALSR3 功能描述:射頻MOSFET電源晶體管 RF POWER LDMOS NI-780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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