- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359670 > MRF18030BLSR3 (飛思卡爾半導體(中國)有限公司) RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs PDF資料下載
參數(shù)資料
| 型號： | MRF18030BLSR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 357K |
| 代理商： | MRF18030BLSR3 |
MRF18030BLR3 MRF18030BLSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
amplifier applications. Specified for GSM 1930-1990 MHz.
Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
83.3
0.48
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Case Operating Temperature
T
C
150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.1
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18030B
Rev. 7, 5/2006
Freescale Semiconductor
Technical Data
MRF18030BLR3
MRF18030BLSR3
1930-1990 MHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF18030BLR3
CASE 465F-04, STYLE 1
NI-400S
MRF18030BLSR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| MW6S004NT1_07 | RF Power Field Effect Transistor |
| MC9328MXLCVP15 | i.MX Integrated Portable System Processor |
| MC9S12DP256CVPV | device made up of standard HCS12 blocks and the HCS12 processor core |
| MDF7-26D-2.54DSA | 2.54mm Pitch Bottom Entry Type Connector |
| MDF7-46D-2.54DSA | 2.54mm Pitch Bottom Entry Type Connector |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18030BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF18030BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF18060A | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復。