參數(shù)資料
型號(hào)： MRF166W
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： TMOS BROADBAND RF POWER FET
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 412-01, 4 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 134K
代理商： MRF166W
1
MRF166W
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
Push–Pull Configuration Reduces Even Numbered Harmonics
Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Low Crss — 4.5 pF @ VDS = 28 Volts
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
VDGR
VGS
ID
PD
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
65
Vdc
±
40
Adc
Drain Current — Continuous
8.0
ADC
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
175
1.0
Watts
°
C/W
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
R
θ
JC
1.0
°
C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF166W/D
SEMICONDUCTOR TECHNICAL DATA
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
FLANGE
1
5
2
3
4
REV 1
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