- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359648 > MRF1570T1 (飛思卡爾半導體(中國)有限公司) RF Power Field Effect Transistors PDF資料下載
參數(shù)資料
| 型號： | MRF1570T1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應晶體管 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 449K |
| 代理商： | MRF1570T1 |
A
A
Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF1570T1 MRF1570FT1
1
RF Device Data
Freescale Semiconductor
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Broadband-Full Power Across the Band: 135-175 MHz
400-470 MHz
Broadband Demonstration Amplifier Information Available Upon Request
200 C Capable Plastic Package
Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
+0.5, +40
Vdc
Gate-Source Voltage
V
GS
±
20
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
165
0.5
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.75
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°
C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1570T1
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
470 MHz, 70 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366-04, STYLE 1
TO-272-8 WRAP
PLASTIC
MRF1570T1
MRF1570T1
MRF1570FT1
CASE 1366A-02, STYLE 1
TO-272-8
PLASTIC
MRF1570FT1
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5S19060MR1 | RF Power Field Effect Transistors |
| MC68HC11K1 | HCMOS Microcontroller Unit |
| MC68HC11K4 | HCMOS Microcontroller Unit |
| MC68HC11KS2 | HCMOS Microcontroller Unit |
| MC68HC711K4 | HCMOS Microcontroller Unit |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF157MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF158 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 2Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF160 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF16006 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 60V 1A 3PIN CASE 395C-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF16030 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF POWER TRANSISTOR NPN SILICON |
發(fā)布緊急采購，3分鐘左右您將得到回復。