參數(shù)資料
型號： MRF1550T1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： CHOPPER STABILIZED LATCH W/TIN PLATING
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
封裝： PLASTIC, TO-272, CASE 1264-09, 6 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 525K
代理商： MRF1550T1
MRF1550T1 MRF1550FT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
0.5
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 800
μ
A)
V
GS(th)
1
—
3
Vdc
Drain–Source On–Voltage
(V
GS
= 5 Vdc, I
D
= 1.2 A)
R
DS(on)
—
—
0.5
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 4.0 Adc)
V
DS(on)
—
—
1
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
—
—
500
pF
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
oss
—
—
250
pF
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
rss
—
—
35
pF
RF CHARACTERISTICS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA)
f = 175 MHz
G
ps
10
—
—
dB
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA)
f = 175 MHz
η
50
—
—
%
Load Mismatch
(V
DD
= 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Ψ
No Degradation in Output Power
Before and After Test
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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