參數(shù)資料
型號(hào)： MRF1550FT1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： PLASTIC, CASE 1264A-02, TO-272, 6 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 337K
代理商： MRF1550FT1
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RF Device Data
Freescale Semiconductor
MRF1550T1 MRF1550FT1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
0.5
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 800 μA)
VGS(th)
1
—
3
Vdc
Drain-Source On-Voltage
(VGS = 5 Vdc, ID = 1.2 A)
RDS(on)
—
0.5
Ω
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
—
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
500
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
250
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
35
pF
RF Characteristics (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
Gps
10
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
η
50
—
%
相關(guān)PDF資料
PDF描述
MRF1550T1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF1550N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1550NT1 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF1550NT1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1550T 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF1550T1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
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