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參數(shù)資料
| 型號(hào)： | MRF1535T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA |
| 封裝： | PLASTIC, TO-272, CASE 1264-09, 6 PIN |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 257K |
| 代理商： | MRF1535T1 |
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10
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
MOUNTING
The specified maximum thermal resistance of 0.9
°
C/W as-
sumes a majority of the 0.170
″
x 0.608
″
source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Meth-
od for the PLD
1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large
signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two
port stability analysis with this device’s
S
parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small
Signal Design
Using Two
Port Parameters” for a discussion of two port
network theory and stability.
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| MRF1535NT1 | RF Power Field Effect Transistors |
| MRF1535FT1 | RF Power Field Effect Transistors |
| MRF16006 | RF POWER TRANSISTOR NPN SILICON |
| MRF160 | RF Power FET(射頻功率場(chǎng)效應(yīng)管) |
| MRF166C | RF Power FET(射頻功率場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF154 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1550FNT1 | 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1550FT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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