參數(shù)資料
型號: MRF1535FNT1
廠商: Motorola, Inc.
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應晶體管
文件頁數(shù): 2/16頁
文件大?。?/td> 257K
代理商: MRF1535FNT1
2
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate
Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
I
GSS
0.3
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 400
μ
A)
V
GS(th)
1
2.6
Vdc
Drain
Source On
Voltage
(V
GS
= 5 Vdc, I
D
= 0.6 A)
R
DS(on)
0.7
Drain
Source On
Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
V
DS(on)
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
250
pF
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
oss
150
pF
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
rss
20
pF
RF Characteristics
(In Freescale Test Fixture)
Common
Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
f = 520 MHz
G
ps
10
dB
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
f = 520 MHz
η
50
%
Load Mismatch
(V
DD
= 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Ψ
No Degradation in Output Power
Before and After Test
相關(guān)PDF資料
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