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參數(shù)資料
| 型號： | MRF141G |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | MRF141G |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS / EACH SIDE TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BVDSS
ID = 100 mA
65
V
IDSS
VDS = 28 V
VGS = 0 V
5.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
A
VGS(th)
ID = 100 mA
VDS = 10 V
1.0
5.0
V
VDS(on)
ID = 10 A
VGS = 10 V
1.5
V
gfs
ID = 5.0 A
VDS = 10 V
5.0
mhos
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
350
420
40
pF
Gps
push-pull
VDD = 28 V
IDQ = 500 mA
Pout = 300 W
f = 175 MHz
12
dB
ηηηη
push-pull
VDD = 28 V
ID(max) = 21.4 A Pout = 300 W
f = 175 MHz
45
%
ψ
push-pull
VDD = 28 V
IDQ = 500 mA
Pout = 300 W
f = 175 MHz VSWR = 5:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
RF FIELD-EFFECT POWER TRANSISTOR
MRF141G
DESCRIPTION:
The
ASI MRF141G is a Dual
Common Source N-Channel
Enhancement-Mode MOSFET
RF Power Transistor, Designed for
175 MHz, 300 W Transmitter and
Amplifier Applications.
MAXIMUM RATINGS
ID
32 A
VDSS
65 V
VGS
±40 V
PDISS
500 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
0.35
OC/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MRF148AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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