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參數(shù)資料
| 型號(hào)： | MRF136Y |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 374K |
| 代理商： | MRF136Y |
MRF136 MRF136Y
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 5.0 mA)
V(BR)DSS
65
—
Vdc
Zero–Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
2.0
mAdc
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Forward Transconductance
(VDS = 10 V, ID = 250 mA)
gfs
250
400
—
mmhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
24
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
5.5
—
pF
FUNCTIONAL CHARACTERISTICS (2)
Noise Figure
MRF136
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
NF
—
1.0
—
dB
Common Source Power Gain (Figure 1)
MRF136
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Gps
13
16
—
dB
Common Source Power Gain (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
Gps
12
14
—
dB
Drain Efficiency (Figure 1)
MRF136
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
η
50
60
—
%
Drain Efficiency (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
η
50
54
—
%
Electrical Ruggedness (Figure 1)
MRF136
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
Electrical Ruggedness (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. For MRF136Y, each side measured separately.
2. For MRF136Y measured in push–pull configuration.
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