參數(shù)資料
型號: MRF1057T1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-70, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 212K
代理商: MRF1057T1
MRF1057T1
2
MOTOROLA RF/IF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTIC [Note 1]
Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
V(BR)CEO
5.0
Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
12
Vdc
Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)CBO
2.5
Vdc
Emitter Cutoff Current (VEB = 1.0 V, IC = 0)
IEBO
0.1
A
Collector Cutoff Current (VCB = 1.0 V, IE = 0)
ICBO
0.2
A
ON CHARACTERISTIC [Note 1]
DC Current Gain (VCE = 3.0 V, IC = 3.0 mA)
hFE
100
200
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (VCB = 1.0 V, IE = 0, f = 1.0 MHz)
Ccb
0.52
pF
Current Gain Bandwidth Product (VCE = 3.0 V, IC = 20 mA,
f
τ
12
GHz
f = 1.0 GHz)
PERFORMANCE CHARACTERISTIC
Insertion Gain
|S21|2
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
7.0
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
11
Maximum Stable Gain and/or Maximum Available Gain [Note 2]
MSG, MAG
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
10
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
15
Minimum Noise Figure
NFmin
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
1.3
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
1.1
Associated Gain at Minimum NF
GNF
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
9.0
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
12
Output Power at 1.0 dB Gain Compression [Note 3] (VCE = 3.0 V,
P1dB
1.0
dBm
IC = 3.0 mA, f = 1.0 GHz)
Output Third Order Intercept [Note 3] (VCE = 3.0 V, IC = 3.0 mA,
OIP3
22
dBm
f = 1.0 GHz)
NOTES: 1. Pulse width
≤300 s, duty cycle ≤2% pulsed.
2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG
+
|
S
21
S
12
K
" K2 * 1
|, if K u 1, MSG + |
S
21
S
12
|,if K t 1
3. Zin = 50 and Zout matched for optimum IP3.
LIFETIME
BUY
L
A
S
T
O
R
D
E
R
1
7
S
E
P
0
L
A
S
T
S
H
IP
1
7
M
A
R
0
1
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