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參數(shù)資料
| 型號： | MRF10150 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 376B-02, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MRF10150 |
The RF Line
Microwave Pulse
Power Transistor
. . . designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
Guaranteed Performance @ 1090 MHz
Output Power = 150 Watts Peak
Gain = 9.5 dB Min, 10.0 dB (Typ)
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Characterized with 10 s, 10% Duty Cycle Pulses
Recommended Driver for a Pair of MRF10500 Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
65
Vdc
Collector–Base Voltage
VCBO
65
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Peak (1)
IC
14
Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25
°C
PD
700
4.0
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +200
°C
Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RθJC
0.25
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
θJC value
measured @ 10
s, 10%.)
MRF10150
150 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
Order this document
by MRF10150/D
SEMICONDUCTOR TECHNICAL DATA
1
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