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參數(shù)資料
| 型號： | MRF10031 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MICROWAVE POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 376B-02, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 101K |
| 代理商： | MRF10031 |
MRF10031
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
55
—
—
Vdc
55
—
—
Vdc
3.5
—
—
Vdc
—
—
2.0
mAdc
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
(10
μ
s Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
hFE
20
—
—
—
GPB
9.0
9.5
—
dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
η
40
45
—
%
Load Mismatch
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
Z5
RF INPUT
D.U.T.
RF OUTPUT
C1
L1
C2
C3
C4
+
+
–
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
36 Vdc
.083
.223
.733
.118
.628
1.350
.669
.780
1.210
.128
.083
.400
1.020
.218
2
.389
.354
.083
.100
.113
.215
BROADBAND FIXTURE
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
μ
F
C4 — 1000
μ
F, 50 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8
″
ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030
″
ε
r = 2.55, 2 Oz. Copper
2.138
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