參數(shù)資料
型號: MRA4005T3G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Standard Recovery Power Rectifier
中文描述: 1 A, 600 V, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, PLASTIC, CASE 403D-02, SMA, 2 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 57K
代理商: MRA4005T3G
MRA4003T3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MRA4003T3
MRA4004T3
MRA4005T1,
MRA4005T3
MRA4006T3
MRA4007T3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
300
400
600
800
1000
Volts
Avg. Rectified Forward Current
(At Rated V
R
, T
L
= 150
°
C)
I
O
1
Amp
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
20 kHz, T
L
= 150
°
C)
I
FRM
2
Amps
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
I
FSM
30
Amps
Storage/Operating Case Temperature
T
stg
, T
C
55 to 150
°
C
Operating Junction Temperature
T
J
55 to 175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 2)
R
θ
JL
R
θ
JA
16.2
88.3
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
T
J
= 25
°
C
T
J
= 100
°
C
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 1 A)
(I
F
= 2 A)
V
F
1.1
1.18
1.04
1.12
Volts
Maximum Instantaneous Reverse Current (at rated DC voltage)
I
R
10
50
A
1. Minimum Pad Size
2. 1 inch Pad Size
3. Pulse Test: Pulse Width
250
μ
s, Duty Cycle
2%.
Figure 1. Typical Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
0.1
1.2
1.0
0.8
0.6
0.4
I
Figure 2. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
400
350
300
250
200
150
100
50
0
I
1.0E9
0.01
10E9
100E9
1.0E6
10E6
100E6
T
J
= 150
°
C
100
°
C
25
°
C
40
°
C
T
J
= 150
°
C
100
°
C
25
°
C
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