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參數(shù)資料
| 型號： | MR856RLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Fast Recovery Rectifiers |
| 中文描述： | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | MR856RLG |
MR850, MR851, MR852, MR854, MR856
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MR850
MR851
MR852
MR854
MR856
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
V
NonRepetitive Peak Reverse Voltage
V
RSM
75
150
250
450
650
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
V
Average Rectified Forward Current
(Single phase resistive load, T
A
= 80
°
C)
I
O
3.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions)
I
FSM
100
(one cycle)
A
Operating and Storage Junction Temperature Range
T
J
, T
stg
65 to +125
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
(Recommended Printed Circuit Board Mounting)
R
JA
28
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Forward Voltage
(I
F
= 3.0 A, T
J
= 25
°
C)
V
F
1.04
1.25
V
Reverse Current (rated DC voltage) T
= 25
°
C
MR850
MR851
MR852
MR854
MR856
T
J
= 80
°
C
I
R
2.0
60
100
10
150
150
200
250
300
A
REVERSE RECOVERY CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
(I
F
= 1.0 A to V
R
= 30 Vdc)
(I
F
= 15 A, di/dt = 10 A/ s)
t
rr
100
150
200
300
ns
Reverse Recovery Current
(I
F
= 1.0 A to V
R
= 30 Vdc)
I
RM(REC)
2.0
A
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